Effect of Microwave Irradiation and Annealing Temperature on the Optical and Electrical Properties of Sol-Gel Synthesized NiTiO3 Thin Films

Research areas:

• Volume 1,Issue 6, May. 2013

Year:

2013

Type of Publication:

Article

Keywords:

Annealing, Dielectric Constant, Microwave Irradiation, Refractive Index

Authors:

K. S. Sumana; K. Narasimha Rao; Y. V. Subba Rao; M. Krishna; C. S. Chandrasekhara Murthy; A. R. Phani

Journal:

IJAIM

Volume:

1

Number:

6

Pages:

167-172

Month:

May

Abstract:

NiTiO3 thin films were deposited on P type (100) silicon substrate by Sol-gel spin coating technique. These films were subjected to two kinds of heat treatments, namely microwave irradiation at different powers for 10 minutes and conventional annealing at different temperatures for different time periods. Optical reflectance of the microwave exposed and annealed NiTiO3 films were studied and the refractive indices were calculated. It was observed that the refractive index of NiTiO3 films varied between 2.2 and 2.35. Metal Oxide Semiconductor (MOS) capacitors were fabricated using both sets of heat treated films. Their electrical properties such as Current Vs Voltage (I-V) and Capacitance Vs Voltage (C-V) were studied. The dielectric constant calculated at 1MHz for microwave exposed films at 540W was 97 whereas for conventionally annealed films at 600°C was 55. The microwave exposed films exhibited higher dielectric constant than the conventionally annealed films.

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