Numerical Investigation of the Effect of Changing the Channel Diameter on Characteristic of Flicker Noise in Silicon Nanowire Field Effect Transistor

Research areas:

• Volume 3,Issue 4, Jan. 2015

Year:

2015

Type of Publication:

Article

Keywords:

Silicon Nanowire Field Effect Transistor, Gate- All-Around, Noise Power Spectral Density, Flicker Noise, Non-Equilibrium Green's Function

Authors:

MohammadrezaHariri; SeyedAli Sedigh Ziabari

Journal:

IJAIM

Volume:

3

Number:

4

Pages:

218-222

Month:

Jan.-Feb.

ISSN:

2320-5121

Abstract:

In this work, we study the effect of changing the channel diameteron characteristic of flicker noise in silicon nanowire field effect transistor through computer simulations. First, we study the fundamentals of flicker noise and obtain the calculation method of noise power spectral density in nanowire transistor. Then by using a powerful quantum simulation software based on non-equilibrium Green's function (NEGF), we obtain the current-voltage curves of gate-all-around silicon nanowire transistor. Next by using MATLAB software, we obtain the related curves to flicker noise power spectral density. The results show that by reducing the diameter of the silicon nanowire channel, the amount of flicker noise power spectral density of silicon nanowire transistor decreases which is due to the reduction of drain current.

Full text: IJAIMIRC-179.pdf